DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting.

FEATURES
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205V-M)
• Closely Matched Current Transfer Ratios
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum BVCEOof 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed

APPLICATIONS
• Feedback Control Circuits
• Interfacing and coupling systems of different potentials and impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits