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H5PS1G83EFR-G7Q Datasheet (PDF) - Hynix Semiconductor

H5PS1G83EFR-G7Q Datasheet PDF - Hynix Semiconductor
Part # H5PS1G83EFR-G7Q
Download  H5PS1G83EFR-G7Q Download

File Size   842.79 Kbytes
Page   63 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 1Gb DDR2 SDRAM

H5PS1G83EFR-G7Q Datasheet (PDF)

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H5PS1G83EFR-G7Q Datasheet PDF - Hynix Semiconductor

Part # H5PS1G83EFR-G7Q
Download  H5PS1G83EFR-G7Q Click to download

File Size   842.79 Kbytes
Page   63 Pages
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor
Description 1Gb DDR2 SDRAM

H5PS1G83EFR-G7Q Datasheet (HTML) - Hynix Semiconductor

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H5PS1G83EFR-G7Q Product details

Device Features & Ordering Information
Key Features
• VDD = 1.8 +/- 0.1V
• VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• 8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write (centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x8)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Self-Refresh High Temperature Entry




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About Hynix Semiconductor


Hynix Semiconductor is a South Korean company that specializes in the design and manufacture of memory semiconductors.
The company was founded in 1983 and is headquartered in Icheon, South Korea.
Hynix is one of the world's leading producers of DRAM (dynamic random access memory) and NAND flash memory, which are used in various applications such as computer systems, mobile devices, and solid-state drives.
Hynix is known for its expertise in memory semiconductor technology and its ability to deliver high-quality and high-performance memory products to its customers.
The company has operations and facilities in various countries across the world and works closely with its customers to provide customized memory solutions that meet their specific requirements and needs.
In addition to its memory products, Hynix also provides a range of products and solutions for the automotive and data center markets, such as system-on-a-chip (SoC) products and high-bandwidth memory (HBM) products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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