BD95513MUV Datasheet(PDF)

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BD95513MUV Datasheet (PDF) - Rohm


Part #	BD95513MUV

Download	BD95513MUV Download

File Size	654.23 Kbytes

Page	16 Pages

Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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Description

FET Integrated Switching Regulators for DDR-SDRAM Cores

BD95513MUV Datasheet (PDF)

Download Datasheet


Part #	BD95513MUV

Download	BD95513MUV Click to download

File Size	654.23 Kbytes

Page	16 Pages

Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

Logo

Description	FET Integrated Switching Regulators for DDR-SDRAM Cores

BD95513MUV Datasheet (HTML) - Rohm

Similar Part No. - BD95513MUV

Manufacturer	Part #	Datasheet	Description
Rohm	BD95513MUV	518Kb / 18P	Switching Regulator with MOS FET for DDR-SDRAM Cores
	BD95513MUV-E2	518Kb / 18P	Switching Regulator with MOS FET for DDR-SDRAM Cores
	BD95513MUV	518Kb / 18P	Switching Regulator with MOS FET for DDR-SDRAM Cores

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Similar Description - BD95513MUV

Manufacturer	Part #	Datasheet	Description
Rohm	BD9532EKN	680Kb / 21P	Switching Regulators for DDR-SDRAM Cores
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	BD9535MUV	786Kb / 19P	Switching Regulators for DDR-SDRAM Cores
	BD9533EKN	726Kb / 21P	Switching Regulators for DDR-SDRAM Cores
	BD95513MUV	518Kb / 18P	Switching Regulator with MOS FET for DDR-SDRAM Cores
	BD95500MUV	496Kb / 21P	Switching Regulator with MOSFET for DDR-SDRAM Cores
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About Rohm

ROHM Semiconductor is a Japanese semiconductor company that was founded in 1958.

The company specializes in the design and manufacture of a wide range of products including power management, power devices, and analog and mixed-signal integrated circuits.

ROHM's products are used in various applications such as consumer electronics, automotive, industrial, and telecommunications.

The company is known for its focus on energy-saving technologies and its expertise in low-power design.

ROHM has operations in over 20 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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