NX6314EH Datasheet(PDF) - Renesas Technology Corp

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NX6314EH Datasheet (PDF) - Renesas Technology Corp

NX6314EH Datasheet PDF - Renesas Technology Corp


Part #	NX6314EH

Download	NX6314EH Download

File Size	205.61 Kbytes

Page	7 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Description

LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS

NX6314EH Datasheet (PDF)

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NX6314EH Datasheet PDF - Renesas Technology Corp


Part #	NX6314EH

Download	NX6314EH Click to download

File Size	205.61 Kbytes

Page	7 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS

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NX6314EH Product details

DESCRIPTION
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

FEATURES
• Optical output power PO = 5.0 mW
• Low threshold current Ith = 10 mA
• Differential efficiency ηd = 0.4 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm

APPLICATIONS
• 1.25 Gb/s FTTH P2P
• 3 Gb/s BTS

Similar Part No. - NX6314EH

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX6314EH	903Kb / 6P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
California Eastern Labs	NX6314EH-AZ	903Kb / 6P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
Renesas Technology Corp	NX6314EH	205Kb / 7P	LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE

Similar Description - NX6314EH

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NX6314EH	903Kb / 6P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
Renesas Technology Corp	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6514EH	217Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
	NX6511GH	207Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
	NX6510GH	207Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
	NX6514EH	205Kb / 7P	LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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