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IS25LQ040 Datasheet (PDF) - Integrated Silicon Solution, Inc

IS25LQ040 Datasheet PDF - Integrated Silicon Solution, Inc
Part # IS25LQ040
Download  IS25LQ040 Download

File Size   746.82 Kbytes
Page   54 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 4 Mbit Single Operating Voltage Serial Flash Memory With 104

IS25LQ040 Datasheet (PDF)

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IS25LQ040 Datasheet PDF - Integrated Silicon Solution, Inc

Part # IS25LQ040
Download  IS25LQ040 Click to download

File Size   746.82 Kbytes
Page   54 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 4 Mbit Single Operating Voltage Serial Flash Memory With 104

IS25LQ040 Datasheet (HTML) - Integrated Silicon Solution, Inc

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IS25LQ040 Product details

GENERAL DESCRIPTION
The IS25LQ020/040 is 2 Mbit / 4 Mbit Serial Peripheral Interface (SPI) Flash memories, providing single-, dual or quad-output. The devices are designed to support a 33 MHz fclock rate in normal read mode, and 104 MHz in fast read (Quad output is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

FEATURES
• Single Power Supply Operation
    - Low voltage range: 2.3 V - 3.6 V
• Memory Organization
    - IS25LQ020: 256K x 8 (2 Mbit)
    - IS25LQ040: 512K x 8 (4 Mbit)
• Cost Effective Sector/Block Architecture
    - 2Mb / 4Mb : Uniform 4KByte sectors / sixteen uniform 64KByte blocks
• Serial Peripheral Interface (SPI) Compatible
    - Supports single-, dual- or quad-output
    - Supports SPI Modes 0 and 3
    - Maximum 33 MHz clock rate for normal read
    - Maximum 104 MHz clock rate for fast read
    - Maximum 208MHz clock rate equivalent Dual SPI
    - Maximum 400MHz clock rate equivalent Quad SPI
• Byte Program Operation
    - Typical 10 us/Byte
• Page Program (up to 256 Bytes) Operation
    - Maximum 0.7ms per page program
• Sector, Block or Chip Erase Operation
    - Sector Erase (4KB) → 150ms (Typ)
    - Block Erase (64KB) → 500ms (Typ)
    - Chip Erase → 0.5s (2Mb)
    - Chip Erase  → 1s (4Mb)
• Low Power Consumption
    - Max 12 mA active read current
    - Max 20 mA program/erase current
    - Max 50 uA standby current
• Hardware Write Protection
    - Protect and unprotect the device from write operation by Write Protect (WP#) Pin
• Software Write Protection
    - The Block Protect (BP3, BP2, BP1, BP0) bits allow partial or entire memory to be configured as read-only
• High Product Endurance
    - Guaranteed 100,000 program/erase cycles per single sector
    - Minimum 20 years data retention
• Industrial Standard Pin-out and Package
    - 8-pin SOIC 208mil
    - 8-pin SOIC 150mil
    - 8-pin VVSOP 150mil
    - 8-pin WSON (5x6mm)
    - 8-pin USON (2x3mm)
    - KGD (Call Factory)
    - Lead-free (Pb-free) package
    - Automotive Temperature Ranges Available
• Additional 256-byte Security information onetime programmable (OTP) area
• Special protect function
    - Safe guard function (Appendix 1)
    - Sector unlock function (Appendix




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About Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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