General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features
• 21 A, 20 V
   RDS(ON) = 32 mW @ VGS = 4.5 V
   RDS(ON) = 47 mW @ VGS = 2.5 V
• Low gate charge (6.5 nC typical)
• Fast switching
• High performance trench technology for extremely
   low RDS(ON)

Applications
• DC/DC converter
• Motor drives