General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.

Features
• 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.
• Critical DC electrical parameters specified at evevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.