General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V • Low gate charge (typical 40 nC) • Low Crss ( typical 17 pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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