Manufacturer | Part # | Datasheet | Description |
Panasonic Semiconductor |
AGN2001H
|
117Kb / 5P |
High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
|
Nais(Matsushita Electri... |
DS2Y
|
57Kb / 3P |
2 Form C contact High sensitivity-200 mW nominal operating power
|
Panasonic Semiconductor |
TX2SA-5V-Z
|
3Mb / 7P |
Very High Sensitivity, 50 mW (nominal operating) Rely with LT style pin layout
|
TXS2-3V
|
3Mb / 7P |
Very High Sensitivity, 50 mW (nominal operating) Rely with LT style pin layout
|
Sony Corporation |
SLD301XT
|
98Kb / 8P |
100mW High Power Laser Diode
|
SLD301V
|
66Kb / 7P |
100mW High Power Laser Diode
|
SLD301WT
|
151Kb / 7P |
100mW HIGH POWER LASER DIODE
|
RF Micro Devices |
VCO-110
|
138Kb / 1P |
Nominal Operating Parameters
|
VCO-111
|
137Kb / 1P |
Nominal Operating Parameters
|
VCO-118
|
137Kb / 1P |
Nominal Operating Parameters
|