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ISL6627CRZ Datasheet (PDF) - Intersil Corporation

ISL6627CRZ Datasheet PDF - Intersil Corporation
Part # ISL6627CRZ
Download  ISL6627CRZ Download

File Size   343.64 Kbytes
Page   11 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description VR11.1, VR12 Compatible Synchronous Rectified Buck MOSFET Driver

ISL6627CRZ Datasheet (PDF)

Go To PDF Page Download Datasheet
ISL6627CRZ Datasheet PDF - Intersil Corporation

Part # ISL6627CRZ
Download  ISL6627CRZ Click to download

File Size   343.64 Kbytes
Page   11 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description VR11.1, VR12 Compatible Synchronous Rectified Buck MOSFET Driver

ISL6627CRZ Datasheet (HTML) - Intersil Corporation

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ISL6627CRZ Product details

The ISL6627 is a high frequency MOSFET driver designed to drive
upper and lower power N-Channel MOSFETs in a synchronous
rectified buck converter topology. The advanced PWM protocol of
ISL6627 is specifically designed to work with Intersil VR11.1,
VR12 controllers and combined with N-Channel MOSFETs to form
a complete core-voltage regulator solution for advanced
microprocessors. When ISL6627 detects a PSI protocol sent by
an Intersil VR11.1, VR12 controller, it activates Diode Emulation
(DE) operation; otherwise, it operates in normal Continuous
Conduction Mode (CCM) PWM mode.
To further enhance light load efficiency, the ISL6627 enables
diode emulation operation during PSI mode. This allows
Discontinuous Conduction Mode (DCM) by detecting when the
inductor current reaches zero and subsequently turning off the
low side MOSFET to prevent it from sinking current.
When ISL6627 detects Diode Braking command from the PWM,
it turns off both gates and reduces overshoot in load transient
situations.
An advanced adaptive shoot-through protection is integrated to
prevent both the upper and lower MOSFETs from conducting
simultaneously and to minimize dead time. The user also has the
option to program the driver working in fixed propagation delay
mode to optimize the regulator efficiency. The ISL6627 has a
20kΩ integrated high-side gate-to-source resistor to prevent self
turn-on due to high input bus dV/dt.

Features
• Intersil VR11.1 and VR12 Compatible
• Dual MOSFET Driver for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-through Protection
• Programmable Fixed Deadtime for Efficiency Optimization
• Low Standby Bias Current
• 36V Internal Bootstrap Diode
• Bootstrap Capacitor Overcharge Prevention
• Supports High Switching Frequency
- 4A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Integrated High-Side Gate-to-Source Resistor to Prevent Self
Turn-on Due to High Input Bus dV/dt
• Power Rails Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat Sinking
• Dual Flat 10 Ld (3x3 DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency
and Thinner in Profile
• Pb-Free (RoHS Compliant)

Applications
• High Light Load Efficiency Voltage Regulators
• Core Regulators for Advanced Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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