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ISL6612IBZ-T(Notes1,2) Datasheet (PDF) - Intersil Corporation

ISL6612IBZ-T(Notes1,2) Datasheet PDF - Intersil Corporation
Part # ISL6612IBZ-T(Notes1,2)
Download  ISL6612IBZ-T(Notes1,2) Download

File Size   363.27 Kbytes
Page   12 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

ISL6612IBZ-T(Notes1,2) Datasheet (PDF)

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ISL6612IBZ-T(Notes1,2) Datasheet PDF - Intersil Corporation

Part # ISL6612IBZ-T(Notes1,2)
Download  ISL6612IBZ-T(Notes1,2) Click to download

File Size   363.27 Kbytes
Page   12 Pages
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation
Description Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

ISL6612IBZ-T(Notes1,2) Datasheet (HTML) - Intersil Corporation

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ISL6612IBZ-T(Notes1,2) Product details

The ISL6612 and ISL6613 are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612 drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613 drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize the dead time.
These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at which
the PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is then
limited by the threshold of the low side MOSFET, which
provides some protection to the microprocessor if the upper
MOSFET(s) is shorted during startup. The over-temperature
protection feature prevents failures resulting from excessive
power dissipation by shutting off the outputs when its junction
temperature exceeds +150°C (typically). The driver resets once
its junction temperature returns to +108°C (typically).
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.

Features
• Pin-to-pin Compatible with HIP6601 SOIC family for Better
Performance and Extra Protection Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Over Temperature Protection (OTP) with +42°C
Hysteresis
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Available (RoHS Compliant)

Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD




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About Intersil Corporation


Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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