Manufacturer | Part # | Datasheet | Description |
Cree, Inc |
PTVA123501EC
|
753Kb / 14P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz
|
PTVA120501EA
|
683Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
|
Infineon Technologies A... |
PTVA120501EA
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
Rev. 02.1, 2016-05-26 |
WOLFSPEED, INC. |
PTVA120501EA
|
695Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Rev. 04, 2023-07-10 |
Cree, Inc |
PTVA127002EV
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 ??1400 MHz
|
WOLFSPEED, INC. |
PTVA127002EV
|
691Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz
Rev. 05, 2023-07-10 |
Infineon Technologies A... |
PTVA043502EC
|
1Mb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz
Rev. 02.2, 2017-02-09 |
Cree, Inc |
PTVA043502EC
|
489Kb / 11P |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz
|
GTVA123501FA
|
285Kb / 4P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 ??1400 MHz
|
STMicroelectronics |
STAC1214-350
|
330Kb / 12P |
350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
August 2020 Rev 2 |