VT30L60C-E3 Datasheet(PDF) - Vishay Siliconix

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VT30L60C-E3 Datasheet (PDF) - Vishay Siliconix

VT30L60C-E3 Datasheet PDF - Vishay Siliconix


Part #	VT30L60C-E3

Download	VT30L60C-E3 Download

File Size	134.71 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

VT30L60C-E3 Datasheet (PDF)

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VT30L60C-E3 Datasheet PDF - Vishay Siliconix


Part #	VT30L60C-E3

Download	VT30L60C-E3 Click to download

File Size	134.71 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

VT30L60C-E3 Datasheet (HTML) - Vishay Siliconix

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VT30L60C-E3 Product details

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.

Similar Part No. - VT30L60C-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VT30L60C-E3	133Kb / 5P	Dual Trench MOS Barrier Schottky Rectifier 01-Jan-2022
	VT30L60C-E3-4W	129Kb / 5P	Dual Trench MOS Barrier Schottky Rectifier Revision: 07-Dec-10
	VT30L60C-E3	133Kb / 5P	Dual Trench MOS Barrier Schottky Rectifier 01-Jan-2022

Similar Description - VT30L60C-E3

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VBT30L60C-E3	89Kb / 4P	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A Revision: 03-Jan-17
	VT4060C-E3	134Kb / 5P	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A Revision: 15-Dec-16
	VBT4060C-M3	88Kb / 4P	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A Revision: 03-Jan-17
	VFT4060C-E3	88Kb / 4P	Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A Revision: 22-Nov-13
	VT60M45C-M3	140Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5 A Revision: 10-May-16
	VBT2045C-M3	89Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A Revision: 03-Jan-17
	VT4045C-M3	135Kb / 5P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A Revision: 15-Dec-16
	VFT3045C-M3	88Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A Revision: 22-Nov-13
	VBT3045C-E3	91Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A Revision: 09-Sep-13
	VB20150C-M3	89Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A Revision: 30-Aug-13

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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