General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 3.7 A, 100 V. RDS(ON) = 70 mΩ @ VGS = 10 V

                    RDS(ON) = 80 mΩ @ VGS = 6.0 V

• High performance trench technology for extremely low R DS(ON)

• Low gate charge (23nC typical)

• High power and current handling capability

• Fast switching speed.

Applications

• DC/DC converter

• Load Switching