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K9K8G08U1M Datasheet (PDF) - Samsung semiconductor

K9K8G08U1M Datasheet PDF - Samsung semiconductor
Part # K9K8G08U1M
Download  K9K8G08U1M Download

File Size   1076.98 Kbytes
Page   41 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9K8G08U1M Datasheet (PDF)

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K9K8G08U1M Datasheet PDF - Samsung semiconductor

Part # K9K8G08U1M
Download  K9K8G08U1M Click to download

File Size   1076.98 Kbytes
Page   41 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

K9K8G08U1M Datasheet (HTML) - Samsung semiconductor

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K9K8G08U1M Product details

GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES
• Voltage Supply
    - 2.70V ~ 3.60V
• Organization
    - Memory Cell Array : (512M + 16,384K)bit x 8bit
    - Data Register : (2K + 64)bit x 8bit
• Automatic Program and Erase
    - Page Program : (2K + 64)Byte
    - Block Erase : (128K + 4K)Byte
• Page Read Operation
    - Page Size : (2K + 64)Byte
    - Random Read : 20µs(Max.)
    - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
    - Page Program time : 200µs(Typ.)
    - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
    - K9F4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    - K9F4G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
    - K9K8G08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)




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