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301 Marking, FDV301N Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDV301N Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page ![]() FDV301N Rev.F 0 0 .5 1 1 .5 2 2 .5 3 0 0 .1 0 .2 0 .3 0 .4 0 .5 V , DRAIN-SOURCE VOLTAGE (V) 3 .5 2 .7 2 .5 V = 4.5V GS 4 .0 2 .0 1 .5 DS 3 .0 0 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 0 .8 1 1 .2 1 .4 I , DRAIN CURRENT (A) V = 2 .0V GS 2 .7 3 .0 4 .0 4 .5 D 3 .5 2 .5 Typical Electrical Characteristics Figure 1. On-Region Characteristics . Figure 2. On-Resistance Variation with Drain Current and Gate Voltage . -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 T , JUNCTION TEMPERATURE (°C) J V = 2.7 V GS I = 0.2A D Figure 3. On-Resistance Variation with Temperature . 0 .5 1 1 .5 2 2 .5 0 0 .05 0 .1 0 .15 0 .2 V , GATE TO SOURCE VOLTAGE (V) 25°C 125° C V = 5.0V DS GS T = -55°C J Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 0.2 0.5 V , BODY DIODE FORWA RD VOLTAGE (V) T = 125°C J 25°C -55°C V = 0V GS SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 4. On Resistance Variation with Gate-To-Source Voltage. 2 2.5 3 3.5 4 0 3 6 9 12 15 V , GATE TO SOURCE VOLTAGE (V) GS 125°C 25°C I = 0.2A D |
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