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301 Marking, FDV301N Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDV301N Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page ![]() FDV301N Rev.F 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 Q , GATE CHARGE (nC) g I = 0.2A D 15V V = 5V DS 10V 0 .5 1 2 5 10 15 25 35 0 .01 0 .02 0 .05 0 .1 0 .2 0 .5 1 V , DRAI N -SOURCE VOLTAGE (V) DS DC 1s 100 m s 10 s 1m s RDS(ON) LI M IT V = 2.7V SINGLE PULSE R = 357 °C/W T = 25°C GS A θJA 0.001 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =357° C/W T = 25°C θJA A Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. 0 .1 0 .5 1 2 5 10 25 1 2 3 5 10 20 30 V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MH z V = 0V GS C oss C rss Figure 8. Capacitance Characteristics . Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical And Thermal Characteristics 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIM E (sec) Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 357 °C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0 .1 0 .05 0 .02 0.01 0 .2 |
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