301 Marking, FDV301N datasheet(1/5 Pages) FAIRCHILD

Part #	FDV301N

Description	Digital FET , N-Channel

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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March 1999

FDV301N

Digital FET , N-Channel

General Description

Features

Absolute Maximum Ratings T

A = 25

oC unless other wise noted

Symbol

Parameter

FDV301N

Units

V

DSS, VCC

Drain-Source Voltage, Power Supply Voltage

25

V

GSS, VI

Gate-Source Voltage, V

IN

8

V

I

D, IO

Drain/Output Current

- Continuous

0.22

A

0.5

P

D

Maximum Power Dissipation

0.35

W

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

ESD

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0

kV

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

357

°C/W

FDV301N Rev.F

25 V, 0.22 A continuous, 0.5 A Peak.

R

DS(ON) = 5 Ω @ VGS= 2.7 V

R

DS(ON) = 4 Ω @ VGS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th) < 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

This N-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance.

This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one N-channel FET can

replace several different digital transistors, with different bias

resistor values.

Mark:301

SOT-23

SuperSOT

TM-8

SOIC-16

SO-8

SOT-223

SuperSOT

TM-6

D

G

S

D

S

G

IN

GND

Vcc

INVERTER APPLICATION

OUT

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