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TLP666G Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TLP666G Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page ![]() TLP666G 2002-09-25 1 TOSHIBA Photo Coupler GaAs Ired & Photo−Triac TLP666G Office machine Household use equipment Triac driver Solid State Relay The TOSHIBA TLP666G consists of a zero voltage crossing turn−on photo−triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. · Peak off−state voltage: 400V(min.) · Trigger LED current: 10mA(max.) · On−state current: 100mA(max.) · UL recognized: UL1577, file no. E67349 · Isolation voltage: 5000Vrms(min.) · Option(D4) type VDE approved: DIN VDE0884/08.87, Certificate no.68383 Maximum operating insulation voltage: 630VPK Highest permissible over voltage: 6000VPK (Note 1) When a VDE0884 approved type is needed, please designate the “option(D4)” · Structural parameter Creepage distance: 7.0mm(min.) Clearance: 7.0mm(min.) Insulation thickness: 0.5mm(min.) Pin Configurations (top view) 1 2 3 4 6 1 : Anode 2 : Cathode 3 : N.C. 4 : Terminal 1 6 : Terminal 2 ZC Unit in mm JEDEC ― EIAJ ― TOSHIBA 11 −9A2 Weight: 0.44 g |
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