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TLP666G Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP666G Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page ![]() TLP666G 2002-09-25 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5 V ― ― 10 µA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off -state current IDRM VDRM=400V ― 10 100 nA Peak on -state voltage VTM ITM=100mA ― 1.7 3.0 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off -state voltage dv / dt Vin=120Vrms, Ta=85°C (Note 3) 200 500 ― V / µs Critical rate of rise of commutating voltage dv/dt(c) Vin=30Vrms, IT=15mA (Note 3) ― 0.2 ― V / µs (Note 3) dv / dt test circuit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT=3V ― 5 10 mA Inhibit voltage VIH IF=rated IFT ― ― 40 V Leakage in inhibited state IIH IF=rated IFT VT=rated VDRM ― 100 300 µA Capacitance (input to output) CS VS=0, f=1MHz ― 0.8 ― pF Isolation resistance RS VS=500V, R.H.≤ 60% 5×10 12 10 14 ― Ω AC, 1 minute 5000 ― ― AC, 1 second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc dv / dt(c) dv / dt 5V, VCC 0V 1 2 3 6 4 VCC Vin RL 4kΩ 120Ω Rin 5 - + |
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