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FKI10300 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FKI10300 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FKI10300 · FEATURES · Low drain-source on-resistance: RDS(on) ≤28.8mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · DC-DC converters · Synchronous rectification · Power supplies · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pulsed 47 A PD Total Dissipation @TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.14 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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