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BSC094N03S Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # BSC094N03S
Description  OptiMOS2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC094N03S Datasheet(HTML) 6 Page - Infineon Technologies AG

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BSC094N03S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=35 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ
98 %
0
2
4
6
8
10
12
14
16
-60
-20
20
60
100
140
180
T j [°C]
25 µA
250 µA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T j [°C]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
10
100
1000
10000
010
20
30
V DS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
3
10
2
10
1
10
0
10
-1
0
0.5
1
1.5
2
V SD [V]
Rev. 1.01
page 6
2004-12-15


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