ACTT2X-800ETN datasheet(2/14 Pages) WEEN

Part #	ACTT2X-800ETN

Description	Enhanced, high temperature ACTT power switch

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Manufacturer	WEEN [WeEn Semiconductors]

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

ACTT2X-800ETN

All information provided in this document is subject to legal disclaimers.

Product data sheet

6 September 2018

2 / 14

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

-

18

A

ITSM

non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

-

20

A

Tj

junction temperature

-

150

°C

VPP

peak pulse voltage

Tj = 25 °C; non-repetitive, off-state;

Fig. 6

-

2

kV

Static characteristics

VD = 12 V; IT = 100 mA; LD+ G+;

Tj = 25 °C; Fig. 8

-

10

mA

VD = 12 V; IT = 100 mA; LD+ G-;

Tj = 25 °C; Fig. 8

-

10

mA

IGT

gate trigger current

VD = 12 V; IT = 100 mA; LD- G-;

Tj = 25 °C; Fig. 8

-

10

mA

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 10

-

10

mA

VT

on-state voltage

IT = 3 A; Tj = 25 °C; Fig. 11

-

2

V

VCL

clamping voltage

ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C

850

-

V

Dynamic characteristics

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

500

-

V/µs

dVD/dt

rate of rise of off-state

voltage

VDM = 536 V; Tj = 150 °C; exponential

waveform; gate open circuit

200

-

V/µs

VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;

dVcom/dt = 20 V/µs; gate open circuit;

snubberless condition

1

-

A/ms

VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;

dVcom/dt = 10 V/µs; gate open circuit

1.5

-

A/ms

dIcom/dt

rate of change of

commutating current

VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;

dVcom/dt = 1 V/µs; gate open circuit

3

-

A/ms

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