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ACTT12X-800CTN Datasheet(PDF) 2 Page - WeEn Semiconductors |
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ACTT12X-800CTN Datasheet(HTML) 2 Page - WeEn Semiconductors |
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2 / 14 page  WeEn Semiconductors ACTT12X-800CTN Enhanced, high temperature ACTT power switch ACTT12X-800CTN All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 14 Symbol Parameter Conditions Min Typ Max Unit full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - - 120 A ITSM non-repetitive peak on- state current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 132 A Tj junction temperature - - 150 °C VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; Fig. 6 - - 2 kV Static characteristics VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 5 - 35 mA VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 5 - 35 mA IGT gate trigger current VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 5 - 35 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 10 - - 30 mA VT on-state voltage IT = 17 A; Tj = 25 °C; Fig. 11 - - 1.5 V VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850 - - V Dynamic characteristics VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 4000 - - V/µs dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit 2000 - - V/µs VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; gate open circuit; snubberless condition 12 - - A/ms VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 10 V/µs; gate open circuit 15 - - A/ms dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 1 V/µs; gate open circuit 20 - - A/ms |
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