ACTT12X-800CTN datasheet(8/14 Pages) WEEN

Part #	ACTT12X-800CTN

Description	Enhanced, high temperature ACTT power switch

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WeEn Semiconductors

ACTT12X-800CTN

Enhanced, high temperature ACTT power switch

ACTT12X-800CTN

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Product data sheet

5 September 2018

8 / 14

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VD = 12 V; IT = 100 mA; LD+ G+;

Tj = 25 °C; Fig. 8

5

-

35

mA

VD = 12 V; IT = 100 mA; LD+ G-;

Tj = 25 °C; Fig. 8

5

-

35

mA

IGT

gate trigger current

VD = 12 V; IT = 100 mA; LD- G-;

Tj = 25 °C; Fig. 8

5

-

35

mA

VD = 12 V; IG = 100 mA; LD+ G+;

Tj = 25 °C; Fig. 9

-

40

mA

VD = 12 V; IG = 100 mA; LD+ G-;

Tj = 25 °C; Fig. 9

-

60

mA

IL

latching current

VD = 12 V; IG = 100 mA; LD- G-;

Tj = 25 °C; Fig. 9

-

40

mA

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 10

-

30

mA

VT

on-state voltage

IT = 17 A; Tj = 25 °C; Fig. 11

-

1.5

V

VD = 12 V; IT = 100 mA; Tj = 25 °C;

Fig. 12

-

0.8

1

V

VGT

gate trigger voltage

VD = 400 V; IT = 100 mA; Tj = 150 °C;

Fig. 12

0.2

0.45

-

V

VD = 800 V; Tj = 25 °C

-

10

µA

ID

off-state current

VD = 800 V; Tj = 150 °C

-

2

mA

VCL

clamping voltage

ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C

850

-

V

Dynamic characteristics

VDM = 536 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

4000

-

V/µs

dVD/dt

rate of rise of off-state

voltage

VDM = 536 V; Tj = 150 °C; exponential

waveform; gate open circuit

2000

-

V/µs

VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;

dVcom/dt = 20 V/µs; gate open circuit;

snubberless condition

12

-

A/ms

VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;

dVcom/dt = 10 V/µs; gate open circuit

15

-

A/ms

dIcom/dt

rate of change of

commutating current

VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A;

dVcom/dt = 1 V/µs; gate open circuit

20

-

A/ms

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