WeEn Semiconductors

BYV410X-600

Dual enhanced ultrafast power diode

BYV410X-600

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Product data sheet

7 November 2018

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8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

with heatsink compound; per diode;

Fig. 3

-

-

5

K/W

thermal resistance

from junction to

heatsink

with heatsink compound; both diodes

conducting

-

-

3

.5

K/W

thermal resistance

from junction to

ambient free air

-

55

-

K/W

001aaf033

1

10

(K/W)

10

1

T

P

t

T

δ =

Fig. 3. Transient thermal impedance from junction to heatsink per diode as a function of pulse width

9. Isolation characteristics

Table 6. Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal

waveform; relative humidity < 65 %;

clean and dust free; from all terminals

to external heatsink

-

-

2500

V

isolation capacitance

from cathode to external heatsink; f = 1

MHz

-

10

-

pF