DC006NG datasheet(3/4 Pages) DOINGTER

Part #	DC006NG

Description	N-Channel MOSFET uses advanced trench technology

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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DC006NG

Typical Characteristics： (T

C=25℃ unless otherwise noted)

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω, L=0.5mH, IAS=15A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

0

1

2

3

4

5

0

100

Figure1: Output Characteristics

VDS(V)

0

1.0

2.0

3.0

4.0

5.0

6.0

0

VGS(V)

Figure 2: Typical Transfer Characteristics

ID (A)

0

10

20

30

40

4.0

6.0

12.0

Figure 3:On-resistance vs. Drain Current

RDS(ON) (mΩ)

ID(A)

0

8

16

24

32

40

0

Figure 5: Gate Charge Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Figure 4: Body Diode Characteristics

IS(A)

VSD(V)

0

6

12

18

24

30

C(pF)

VDS(V)

Figure 6: Capacitance Characteristics

2

10

Qg(nC)

VGS(V)

2100

Coss

Crss

TJ=125℃

25℃

Ciss

8.0

10.0

14.0

125℃

TJ=25℃

2.0

20

100

101

102

0

10V

7V

5V

3V

VGS=2.5V

40

60

80

3.5V

100

20

40

60

80

103

VGS=0V

4

6

8

1800

1500

1200

900

600

300

VGS=4.5V

VGS=10V

VDS=15V

ID=30A

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