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P2N2222ARL1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # P2N2222ARL1G
Description  Amplifier Transistors(NPN Silicon)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

P2N2222ARL1G Datasheet(HTML) 2 Page - ON Semiconductor

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P2N2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(IC =10mAdc, IB =0)
V(BR)CEO
40
--
Vdc
Collector--Base Breakdown Voltage
(IC =10 mAdc, IE =0)
V(BR)CBO
75
--
Vdc
Emitter--Base Breakdown Voltage
(IE =10 mAdc, IC =0)
V(BR)EBO
6.0
--
Vdc
Collector Cutoff Current
(VCE =60Vdc,VEB(off) =3.0 Vdc)
ICEX
--
10
nAdc
Collector Cutoff Current
(VCB =60Vdc,IE =0)
(VCB =60Vdc,IE =0,TA = 150°C)
ICBO
--
--
0.01
10
mAdc
Emitter Cutoff Current
(VEB =3.0 Vdc, IC =0)
IEBO
--
10
nAdc
Collector Cutoff Current
(VCE =10V)
ICEO
--
10
nAdc
Base Cutoff Current
(VCE =60Vdc,VEB(off) =3.0 Vdc)
IBEX
--
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC =0.1 mAdc,VCE =10Vdc)
(IC =1.0 mAdc,VCE =10Vdc)
(IC =10mAdc, VCE =10Vdc)
(IC =10mAdc, VCE =10Vdc,TA =--55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE =1.0 Vdc) (Note1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
hFE
35
50
75
35
100
50
40
--
--
--
--
300
--
--
--
Collector--Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB =15mAdc)
(IC = 500 mAdc, IB =50mAdc)
VCE(sat)
--
--
0.3
1.0
Vdc
Base--Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB =15mAdc)
(IC = 500 mAdc, IB =50mAdc)
VBE(sat)
0.6
--
1.2
2.0
Vdc
SMALL--SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Note 2)
(IC =20mAdc, VCE = 20 Vdc, f = 100 MHz)C
fT
300
--
MHz
Output Capacitance
(VCB =10Vdc,IE =0,f=1.0MHz)
Cobo
--
8.0
pF
Input Capacitance
(VEB =0.5 Vdc, IC =0,f=1.0MHz)
Cibo
--
25
pF
Input Impedance
(IC =1.0 mAdc,VCE = 10 Vdc, f = 1.0 kHz)
(IC =10mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2.0
0.25
8.0
1.25
kΩ
Voltage Feedback Ratio
(IC =1.0 mAdc,VCE = 10 Vdc, f = 1.0 kHz)
(IC =10mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
--
--
8.0
4.0
X10--4
Small--Signal Current Gain
(IC =1.0 mAdc,VCE = 10 Vdc, f = 1.0 kHz)
(IC =10mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
50
75
300
375
--
Output Admittance
(IC =1.0 mAdc,VCE = 10 Vdc, f = 1.0 kHz)
(IC =10mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
5.0
25
35
200
mMhos
Collector Base Time Constant
(IE =20mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb′Cc
--
150
ps
Noise Figure
(IC = 100 mAdc, VCE =10Vdc,RS =1.0 kΩ,f=1.0kHz)
NF
--
4.0
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.


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