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STM32L412R8I6XXX Datasheet(PDF) 119 Page - STMicroelectronics |
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STM32L412R8I6XXX Datasheet(HTML) 119 Page - STMicroelectronics |
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119 / 192 page ![]() DS12469 Rev 8 119/192 STM32L412xx Electrical characteristics 164 6.3.8 Internal clock source characteristics The parameters given in Table 57 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 57. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty Cycle - 45 - 55 % ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % tsu(HSI16)(2) HSI16 oscillator start-up time -- 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time -- 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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