2SB1603A datasheet(1/3 Pages) PANASONIC

Part #	2SB1603A

Description	Silicon PNP epitaxial planar type(For low-voltage switching)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SB1603, 2SB1603A

Silicon PNP epitaxial planar type

For low-voltage switching

s Features

q

Low collector to emitter saturation voltage VCE(sat)

q

High-speed switching

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–40

–50

–20

–40

–5

–8

–4

25

2

150

–55 to +150

2SB1603

2SB1603A

2SB1603

2SB1603A

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = –40V, IE = 0

VEB = –5V, IC = 0

IC = –10mA, IB = 0

VCE = –2V, IC = – 0.1A

VCE = –2V, IC = –1A

IC = –2A, IB = – 0.1A

VCE = –5V, IC = – 0.5A, f = 10MHz

IC = –2A, IB1 = – 0.2A, IB2 = 0.2A

min

–20

–40

45

90

typ

150

0.3

0.4

0.1

max

–50

260

– 0.5

–1.5

Unit

µA

V

MHz

µs

2SB1603

2SB1603A

*h

FE2 Rank classification

Rank

Q

P

hFE2

90 to 180

130 to 260

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