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QM12N65F Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # QM12N65F
Description  N-Channel MOSFET uses advanced trench technology
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

QM12N65F Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=650V,ID=10 A,RDS(ON)<0..78Ω@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Continuous Drain Current-
TC=25℃
10
A
Continuous Drain Current-TC=100℃
6.3
Pulsed Drain Current
1
40
EAS
Single Pulse Avalanche Energy
2
560
mJ
PD
Power Dissipation
27
W
IAR
10
A
EAR
45
MJ
Dv/dt
5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55-+150
℃
Thermal Characteristics：
Repetitive Avalanche Energy
Peak Diode Recovery dv/
1
3
Avalanche Current 1
G D
S
QM 12N65F


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