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STM32G474CB Datasheet(PDF) 170 Page - STMicroelectronics

Part # STM32G474CB
Description  Arm® Cortex®-M4 32-bit MCUFPU, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer
PDF  236 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G474CB Datasheet(HTML) 170 Page - STMicroelectronics

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Electrical characteristics
STM32G474xB STM32G474xC STM32G474xE
170/236
DS12288 Rev 4
5.3.24
Temperature sensor characteristics
5.3.25
VBAT monitoring characteristics
Table 81. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
1. Guaranteed by design.
VTS linearity with temperature
-
±1
±2
°C
Avg_Slope(1)
Average slope
2.3
2.5
2.7
mV/°C
V30
Voltage at 30°C (±5 °C)(2)
2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer
to Table 5: Temperature sensor calibration values.
0.742
0.76
0.785
V
tSTART-RUN(1)
Start-up time in Run mode (start-up of buffer)
-
8
15
µs
tSTART_CONT(3)
3.
Continuous mode means RUN mode or Temperature Sensor ON.
Start-up time when entering in continuous
mode
-
70
120
µs
tS_temp(1)
ADC sampling time when reading the
temperature
5-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD,
when selected by ADC
-4.7
7
µA
Table 82. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-39
-
kΩ
QRatio on VBAT measurement
-
3
-
-
Er(1)
1. Guaranteed by design.
Error on Q
-10
-
10
%
tS_vbat(1)
ADC sampling time when reading the
VBAT
12
-
-
µs
Table 83. VBAT charging characteristics
Symbol
Parameter Conditions
Min
Typ
Max
Unit
RBC
Battery
charging
resistor
VBRS = 0
-
5
-
kΩ
VBRS = 1
-
1.5
-



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