SQJ402EP

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Vishay Siliconix

S13-1414-Rev. B, 24-Jun-13

4

Document Number: 67997

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

8

16

24

32

40

Q

I

V

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

I

V

V

0.00

0.01

0.02

0.03

0.04

0.05

0

2

4

6

8

10

V

T

T

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

T

- 1.5

- 1.1

- 0.7

- 0.3

0.1

0.5

- 50

- 25

0

25

50

75

100

125

150

175

T

I

I

100

105

110

115

120

125

- 50

- 25

0

25

50

75

100

125

150

175

T

I