SQJ402EP_V01 datasheet(1/10 Pages) VISHAY

Part #	SQJ402EP

Description	Automotive N-Channel 100 V (D-S) 175 째C MOSFET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 10 page

SQJ402EP

www.vishay.com

Vishay Siliconix

S13-1414-Rev. B, 24-Jun-13

1

Document Number: 67997

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

100

RDS(on) () at VGS = 10 V

0.0110

RDS(on) () at VGS = 4.5 V

0.0140

ID (A)

32

Configuration

Single

D

G

S

N-Channel MOSFET

4

6.15

mm

PowerPAK® SO-8L Single

5.13

mm

3

2

1

G

S

D

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SQJ402EP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TC = 25 °C

ID

32

A

TC = 125 °C

32

Continuous Source Current (Diode Conduction)a

IS

32

Pulsed Drain Currentb

IDM

75

Single Pulse Avalanche Current

L = 0.1 mH

IAS

31

Single Pulse Avalanche Energy

EAS

48

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

83

W

TC = 125 °C

27

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

65

°C/W

Junction-to-Case (Drain)

RthJC

1.8

Similar Part No. - SQJ402EP_V01

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SQJ402EP	239Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023

More results

Similar Description - SQJ402EP_V01

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SQJQ112ER	169Kb / 6P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 22-Feb-2021
	SQJ110EP	185Kb / 6P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET 01-Jan-2022
	SQD50N10-8M9L	166Kb / 9P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET 01-Jan-2022
	SQR40N10-25	209Kb / 9P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET 01-Jan-2022
	SQR70090ELR	260Kb / 8P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET 01-Jan-2022
	SQJ488EP	242Kb / 10P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET 01-Jan-2022
	SQSA12CENW	268Kb / 8P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 19-Oct-2020
	SQP120N10-3M8	140Kb / 8P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 01-Jul-13
	SQJ456EP-T1-GE3	122Kb / 7P	Automotive N-Channel 100 V (D-S) 175 째C MOSFET Rev. F, 28-Nov-11

More results

SQJ402EP Datasheet(PDF) 1 Page - Vishay Siliconix

SQJ402EP Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SQJ402EP_V01

Similar Description - SQJ402EP_V01

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL