SQR40N10-25_V01 datasheet(4/9 Pages) VISHAY

Part #	SQR40N10-25

Description	Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQR40N10-25

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Vishay Siliconix

S15-1873-Rev. F, 10-Aug-15

4

Document Number: 69060

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

10203040

50

ID =40A

VDS =50V

Q

g - Total Gate Charge (nC)

TJ = 25 °C

TJ = 150 °C

0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

V

SD - Source-to-Drain Voltage (V)

- 50

- 25

0

25

50

75

100

125

150

175

ID =5mA

ID = 250 μA

T

J - Temperature (°C)

- 1.5

- 1.1

- 0.7

- 0.3

0.1

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

ID =40A

VGS =10V

T

J - Junction Temperature (°C)

0

0.04

0.08

0.12

0.16

0.20

0

2468

10

TJ = 25 °C

TJ = 150 °C

V

GS - Gate-to-Source Voltage (V)

100

106

112

118

124

130

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

ID = 10 mA

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