SI4936CDY_V01 datasheet(3/9 Pages) VISHAY

Part #	SI4936CDY

Description	Dual N-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4936CDY

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Vishay Siliconix

S09-0390-Rev. C, 09-Mar-09

3

Document Number: 69097

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 10 V thru 4 V

VGS =3 V

VGS = 1 V, 2 V

VDS - Drain-to-Source Voltage (V)

0.02

0.03

0.04

0.05

0.06

05

10

15

20

VGS =4.5 V

VGS =10V

ID - Drain Current (A)

0

2

4

6

8

10

0123

456

ID =5A

VDS =24V

VDS =15 V

Qg - Total Gate Charge (nC)

0

1

2

3

4

5

012

3

4

TC = 25 °C

TC =125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

100

200

300

400

0

5

10

15

20

25

30

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

0

25

50

75

100

125

150

VGS =4.5 V;

ID =4.7 A

VGS =10V; ID =5A

TJ - Junction Temperature (°C)

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