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STM32WB35CEU6A Datasheet(PDF) 152 Page - STMicroelectronics |
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STM32WB35CEU6A Datasheet(HTML) 152 Page - STMicroelectronics |
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152 / 196 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 152/196 DS11929 Rev 14 Figure 30. Typical connection diagram using the ADC 1. Refer to Table 77: ADC characteristics for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (refer to Table 72: I/O static characteristics for the value of the pad capacitance). A high Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced. 3. Refer to Table 72: I/O static characteristics for the values of Ilkg. 4. Refer to Figure 16 and Figure 17. General PCB design guidelines Power supply decoupling has to be performed as shown in Figure 16: Power supply scheme (all packages except UFBGA129 and WLCSP100). The 10 nF capacitor needs to be ceramic (good quality), placed as close as possible to the chip. 6.3.21 Voltage reference buffer characteristics MSv67871V3 Sample-and-hold ADC converter Converter Cparasitic (2) Ilkg (3) CADC VDDA (4) RAIN (1) VAIN RADC VREF+ (4) VSSA I/O analog switch Sampling switch with multiplexing VSS VSS Table 83. VREFBUF characteristics(1) Symbol Parameter Conditions Min Typ Max Unit VDDA Analog supply voltage Normal mode VRS = 0 2.4 - 3.6 V VRS = 1 2.8 - 3.6 Degraded mode(2) VRS = 0 1.65 - 2.4 VRS = 1 1.65 - 2.8 VREFBUF_ OUT Voltage reference output Normal mode(3) VRS = 0 2.046 2.048 2.049 VRS = 1 2.498 2.500 2.502 Degraded mode(2) VRS = 0 VDDA-150 mV - 2.049 VRS = 1 VDDA-150 mV - 2.502 TRIM Trim step resolution - - - ±0.05 ±0.1 % CL Load capacitor - - 0.5 1 1.5 µF esr Equivalent series resistor of Cload -- - - 2 Ω |
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