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QB-R5F100SL-TB Datasheet(PDF) 117 Page - Renesas Technology Corp

Part # QB-R5F100SL-TB
Description  True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC and LVD) for the general-purpose applications, with 1.6-V to 5.5-V operation, 16- to 512-Kbyte code flash memory, and 41 DMIPS at 32 MHz
PDF  207 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

QB-R5F100SL-TB Datasheet(HTML) 117 Page - Renesas Technology Corp

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RL78/G13
2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0131EJ0350 Rev.3.50
117 of 200
Jun 30, 2020
2.7 RAM Data Retention Characteristics
(TA = –40 to +85°C, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
VDDDR
1.46Note
5.5
V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
VDD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
VDDDR
Operation mode
2.8 Flash Memory Programming Characteristics
(TA = –40 to +85°C, 1.8 V
≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
CPU/peripheral hardware clock
frequency
fCLK
1.8 V
≤ VDD ≤ 5.5 V
1
32
MHz
Number of code flash rewrites
Notes 1, 2, 3
Cerwr
Retained for 20 years
TA = 85°C
1,000
Times
Number of data flash rewrites
Notes 1, 2, 3
Retained for 1 years
TA = 25°C
1,000,000
Retained for 5 years
TA = 85°C
100,000
Retained for 20 years
TA = 85°C
10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.



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