BSR13 datasheet(5/9 Pages) NEXPERIA

Part #	BSR13

Description	NPN switching transistors

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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5 / 9 page

2004 Jan 13

4

NXP Semiconductors

Product data sheet

NPN switching transistors

BSR13; BSR14

Note

1.

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

hFE

DC current gain

IC = 0.1 mA; VCE = 10 V; note 1

35

−

IC = 1 mA; VCE = 10 V; note 1

50

−

IC = 10 mA; VCE = 10 V; note 1

75

−

IC = 150 mA; VCE = 10 V; note 1

100

300

IC = 150 mA; VCE = 1 V; note 1

50

−

DC current gain

IC = 500 mA; VCE = 10 V; note 1

BSR13

30

−

BSR14

40

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA

BSR13

−

400

mV

BSR14

−

300

mV

collector-emitter saturation voltage

IC = 500 mA; IB = 50 mA

BSR13

−

1.6

V

BSR14

−

1

V

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA

BSR13

−

1.3

V

BSR14

0.6

1.2

V

base-emitter saturation voltage

IC = 500 mA; IB = 50 mA

BSR13

−

2.6

V

BSR14

−

2

V

Cc

collector capacitance

IE = Ie = 0; VCB = 10 V; f = 1 MHz

−

8

pF

fT

transition frequency

IC = 20 mA; VCE = 20 V;

f = 100 MHz

BSR13

250

−

MHz

BSR14

300

−

MHz

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

−

35

ns

td

delay time

−

15

ns

tr

rise time

−

20

ns

toff

turn-off time

−

250

ns

ts

storage time

−

200

ns

tf

fall time

−

60

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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BSR13 Datasheet(PDF) 5 Page - Nexperia B.V. All rights reserved

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