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BSS98 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSS98 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 7 page BSS 98 Data Sheet 7 05.99 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.3 A, VGS = 10 V -60 -20 20 60 100 ˚C 160 T j 0 1 2 3 4 5 6 7 Ω 9 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V 2.6 V GS(th) -60 -20 20 60 100 ˚C 160 T j 2% typ 98% Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 ˚C typ T j = 25 ˚C (98%) T j = 150 ˚C typ T j = 150 ˚C (98%) |
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