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ST72F262G2B6 Datasheet(PDF) 144 Page - STMicroelectronics |
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ST72F262G2B6 Datasheet(HTML) 144 Page - STMicroelectronics |
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144 / 172 page ![]() ST72260Gx, ST72262Gx, ST72264Gx 144/172 13.8 I/O PORT PIN CHARACTERISTICS 13.8.1 General Characteristics TA = -40 to +85°C unless otherwise specified Notes: 1. Data based on characterization results, not tested in production. 2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the corresponding VIN maximum must always be respected. Caution: Negative current injection not allowed on Flash device pins PB0 and PB1. 3. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see Figure 76). Data based on design simulation and/or technology characteristics, not tested in production. 4. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de- scribed in Figure 77). 5. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Figure 76. Two typical Applications with unused I/O Pin configured as input Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage1) Vss - 0.3 0.3xVDD V VIH Input high level voltage1) 0.7xVDD VDD + 0.3 Vhys Schmitt trigger voltage hysteresis 1) 400 mV IINJ(PIN) 2) Injected current on Flash device pins PB0 and PB1 +4 mA Injected Current on other I/O pins VDD=5V ±4 ΣI INJ(PIN) 2) Total injected current (sum of all I/O and control pins) ±25 IL Input leakage current VSS≤VIN≤VDD ±1 µA IS Static current consumption Floating input mode3) 400 RPU Weak pull-up equivalent resistor 4) VIN=VSS VDD=5V 50 85 250 k Ω VDD=3V 1701) 190 2301) CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time 1) CL=50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time 1) 25 tw(IT)in External interrupt pulse time5) 1tCPU 10k Ω UNUSED I/O PORT ST7XXX 10k Ω UNUSED I/O PORT ST7XXX VDD Note: I/O can be left unconnected if it is configured as output (0 or 1) by the software. This has the advantage of greater EMC robustness and lower cost. |
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