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AT89C5131A-RDTIM Datasheet(PDF) 172 Page - ATMEL Corporation |
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AT89C5131A-RDTIM Datasheet(HTML) 172 Page - ATMEL Corporation |
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172 / 186 page  172 AT89C5130A/31A-M 4337G–USB–11/06 Flash EEPROM Memory and Data EEPROM Memory Table 123. Timing Symbol Definitions Table 124. Memory AC Timing Vcc = 3.3V ± 10%, TA = -40 to +85°C Figure 82. Flash Memory - ISP Waveforms Figure 83. Flash Memory - Internal Busy Waveforms Signals Conditions S (Hardware Condition) PSEN, EA L Low RRST VValid B FBUSY Flag X No Longer Valid Symbol Parameter Min Typ Max Unit TSVRL Input PSEN Valid to RST Edge 50 ns TRLSX Input PSEN Hold after RST Edge 50 ns TBHBL Flash EEPROM Internal Busy (Programming) Time 10 20 ms TBHBL EEPROM Data Internal Busy (Programming) Time 10 20 ms Flash EEPROM program memory write cycles 100K Cycles Configuration bits (fuses bits) memory write cycles (BLJB, X2, OSCON0, OSCON1) 1K Cycles EEPROM Data memory write cycles 100K Cycles RST T SVRL PSEN T RLSX FBUSY bit T BHBL |
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