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Pigtailed PD for analog application
DataSheet TAP4NN3 Series
Teradian Inc.
- 2 / 4 -
DS-TP-110-Rev01
2004-07-14
Absolute Maximum Ratings
Parameters
Symbol
Unit
Min.
Max.
Remarks
Ambient Operating Temperature
Top
℃
-40
85
Outdoor use
Storage Temperature
Tstg
℃
-40
85
Reverse Voltage
VRP
V
-
15/20/
Reverse Current
IRP
mA
-
3/1 /
Forward Current
IFL
mA
-
50/2/
Lead Soldering Temp./Time
℃
/sec
260/10
Electrical & Optical Characteristics
(Top = 25℃)
Parameters
Symbol
Condition
Unit
Min.
Typ.
Max.
Remark
Detection range
λ
VR=5V, R>0.75
R > 0.65
µm
1.1
1.6
Responsivity
R
VR=5V,λ=1.3µm
VR=5V, λ=1.5µm
A/W
0.80
0.85
0.85
0.90
Dark Current
ID
VR=5V
nA
1.0
Cut-off Frequency
fc
-3dB, VR=5V
GHz
2/3
RL=50Ω
Reverse Breakdown
Voltage
VBD
VR=5V, IRD=1µA
V
25/0
Capacitance
C
VR=5V, f=1MHz
pF
0.6
Second-Order Distortion
IMD2
VR=12V,
PAVG=0dBm,
OMI=0.4, Note1
dBc
-70
TAP4NN31)
TZP4NN32)
TBP4NN33)
Third-Order Distortion
IMD3
Note 1
dBc
-75
TZP4NN32)
TBP4NN33)
Back Reflection
IL
dB
-45
Active Area
Diameter
∅
µm
75/70
45
for 2GHz
for 5GHz
Note1-1) TAP4NN3 : Two-tone test condition : f1=13MHz, f2=19MHz, f1
±f2
Note1-2) TZP4NN3 : Two-tone test condition : f1=320MHz, f2=450MHz, f1
±f2, λ=1550nm per channel
Note1-3) TBP4NN3 : same as the Note1-2
! Handling Caution
The Photo-diode can be damaged by overvoltage and current surges. Precautions should be
taken for transient power supply.
This device is susceptible to damage as a result of electrostatic discharge(ESD). Take proper
precautions during both handling and testing
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