MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21312

TRANSFER-MOLD TYPE

INSULATED TYPE

Aug. 1999

Fig. 5 TIMING CHARTS OF THE DIP-IPM PROTECTIVE FUNCTIONS

[A] Short-Circuit Protection (Lower-arms only)

(For the external shunt resistance and CR connection, please refer to Fig. 3.)

a1. Normal operation : IGBT ON and carrying current.

a2. Short-circuit current detection (SC trigger).

a3. IGBT gate interrupt.

a4. IGBT turns OFF.

a6. Input “H” : IGBT OFF state.

a8. IGBT OFF state.

a1. Normal operation : IGBT ON and carrying current.

a3. IGBT OFF inspite of control input condition.

a6. Normal operation : IGBT ON and carrying current.

Note : The CR time constant safe guards against erroneous SC fault signals resulting from di/dt generated voltages when the IGBT turns ON.

The optimum setting for the CR circuit time constant is 1.5~2.0

µs.

Fault output Fo

Sense voltage of the

shunt resistance

SC reference voltage

CR circuit time constant DELAY (*Note)

Output current Ic(A)

Internal IGBT gate

Protection circuit state

Lower-arms control input

a5

a8

a4

a3

a1

a2

SC

RESET

SET

a7

a6

Fault output Fo (N-side only)

Output current Ic(A)

Protection circuit state

Control input

a6

a1

a3

a5

a2

RESET

SET

a4