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2SA1734 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1734 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SA1734 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −40 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ― ― −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) VCE = −2 V, IC = −100 mA 120 ― 400 DC current gain hFE (2) VCE = −2 V, IC = −1.0 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = −700 mA, IB = −35 mA ― ― −0.5 V Base-emitter saturation voltage VBE (sat) IC = −700 mA, IB = −35 mA ― ― −1.2 V Transition frequency fT VCE = −2 V, IC = −100 mA ― 100 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 16 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 0.2 ― Switching time Fall time tf ― 0.1 ― μs Marking IB2 VCC = −14 V IB1 20 μs −IB1 = IB2 = 35 mA, DUTY CYCLE ≤ 1% IB1 IB2 OUTPUT INPUT L B Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. |
Similar Part No. - 2SA1734_07 |
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Similar Description - 2SA1734_07 |
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