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STM32G474CB Datasheet(PDF) 133 Page - STMicroelectronics

Part # STM32G474CB
Description  Arm® Cortex®-M4 32b MCUFPU, up to 512 KB Flash, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math accelerator, 184ps 12ch Hi-res timer
PDF  232 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G474CB Datasheet(HTML) 133 Page - STMicroelectronics

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DS12288 Rev 1
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STM32G474xB STM32G474xC STM32G474xE
Electrical characteristics
201
Static latch-up
Two complementary static tests are required on three parts to assess the latch-up
performance:
•
A supply overvoltage is applied to each power supply pin.
•
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78E IC latch-up standard.
5.3.13
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 56.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 55. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +125 °C conforming to JESD78E
Class II level A
Table 56. I/O current injection susceptibility
Symbol
Description
Functional
susceptibility
Unit
Negative
injection
Positive
injection
IINJ(1)
Injected current on pin
All except TT_a, PF10, PB8-BOOT0, PC10
-5
NA
mA
PF10, PB8-BOOT0, PC10
-0
NA
TT_a pins
-5
0
1. Guaranteed by characterization.



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