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TLP160G Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP160G Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page ![]() TLP160G 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 μA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off −state current IDRM VDRM=400V ― 10 1000 nA Peak on −state voltage VTM ITM=70mA ― 1.7 2.8 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off −state voltage dv / dt Vin=120Vrms, Ta=85°C (Fig.1) 200 500 ― V / μs Critical rate of rise of commutating voltage dv / dt(c) IT=15mA, Vin=30Vrms (Fig.1) ― 0.2 ― V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT=3V ― 5 10 mA Capacitance input to output Cs VS=0, f=1MHz ― 0.8 ― pF Isolation resistance RS VS=500V, R.H. ≤ 60% 1×10 12 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Turn −on time tON VD=6→4V, RL = 100Ω IF=rated IFT×1.5 ― 30 100 μs Fig.1 dv / dt Test Circuit 1 6 3 4 ~ 5V,VCC 0V Vin RL 2kΩ dv / dt (c) VCC + - dv / dt Rin 120Ω |
Similar Part No. - TLP160G_07 |
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Similar Description - TLP160G_07 |
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