Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

STM32F429NET6 Datasheet(PDF) 128 Page - STMicroelectronics

Part # STM32F429NET6
Description  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  231 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F429NET6 Datasheet(HTML) 128 Page - STMicroelectronics

Back Button STM32F429NET6 Datasheet HTML 124Page - STMicroelectronics STM32F429NET6 Datasheet HTML 125Page - STMicroelectronics STM32F429NET6 Datasheet HTML 126Page - STMicroelectronics STM32F429NET6 Datasheet HTML 127Page - STMicroelectronics STM32F429NET6 Datasheet HTML 128Page - STMicroelectronics STM32F429NET6 Datasheet HTML 129Page - STMicroelectronics STM32F429NET6 Datasheet HTML 130Page - STMicroelectronics STM32F429NET6 Datasheet HTML 131Page - STMicroelectronics STM32F429NET6 Datasheet HTML 132Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 128 / 231 page
background image
Electrical characteristics
STM32F427xx STM32F429xx
128/231
DocID024030 Rev 6
tBE
Bank erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Table 49. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
6.9
-
s
tBE
Bank erase time
-
6.9
-
s
Vprog
Programming voltage
2.7
-
3.6
V
VPP
VPP voltage range
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
--
1
hour
Table 48. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com