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LM12L458CIV Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM12L458CIV Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 29 page Digital Timing Characteristics The following specifications apply for V A+=VD+ = +3.3V, tr =tf = 3 ns, and CL = 100 pF on data I/O, INT and DMARQ lines unless otherwise specified. Boldface limits apply for T A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. (Notes 6, 7, 8) Symbol (See Figures 10, 11, 12) Parameter Conditions Typical (Note 10) Limits (Note 11) Units 1, 3 CS or Address Valid to ALE Low Set-Up Time 40 ns (min) 2, 4 CS or Address Valid to ALE Low Hold Time 20 ns (min) 5 ALE Pulse Width 45 ns (min) 6 RD High to Next ALE High 35 ns (min) 7 ALE Low to RD Low 20 ns (min) 8 RD Pulse Width 100 ns (min) 9 RD High to Next RD or WR Low 100 ns (min) 10 ALE Low to WR Low 20 ns (min) 11 WR Pulse Width 60 ns (min) 12 WR High to Next ALE High 75 ns (min) 13 WR High to Next RD or WR Low 140 ns (min) 14 Data Valid to WR High Set-Up Time 40 ns (min) 15 Data Valid to WR High Hold Time 30 ns (min) 16 RD Low to Data Bus Out of TRI-STATE 30 10 ns (min) 70 ns (max) 17 RD High to TRI-STATE R L =1k Ω 30 10 ns (min) 110 ns (max) 18 RD Low to Data Valid (Access Time) 30 10 ns (min) 95 ns (max) 20 Address Valid or CS Low to RD Low 20 ns (min) 21 Address Valid or CS Low to WR Low 20 ns (min) 19 Address Invalid from RD or WR High 10 ns (min) 22 INT High from RD Low 30 10 ns (min) 60 ns (max) 23 DMARQ Low from RD Low 30 10 ns (min) 60 ns (max) Electrical Characteristics Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: All voltages are measured with respect to GND, unless otherwise specified. Note 3: When the input voltage (VIN) at any pin exceeds the power supply rails (VIN < GND or VIN > (VA+orVD+)), the current at that pin should be limited to 5 mA. The 20 mA maximum package input current rating allows the voltage at any four pins, with an input current of 5 mA, to simultaneously exceed the power supply voltages. Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax −TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 5: Human body model, 100 pF discharged through a 1.5 k Ω resistor. Note 6: Two on-chip diodes are tied to each analog input through a series resistor, as shown below. Input voltage magnitude up to 5V above VA+ or 5V below GND will not damage the LM12L458. However, errors in the A/D conversion can occur if these diodes are forward biased by more than 100 mV. As an example, if VA+ is 3.0 VDC, full-scale input voltage must be ≤3.1 VDC to ensure accurate conversions. www.national.com 6 |
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