2SA1943 datasheet(1/5 Pages) TOSHIBA

Part #	2SA1943

Description	Power Amplifier Applications

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

1 / 5 page

2SA1943

2004-07-07

1

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1943

Power Amplifier Applications

• High collector voltage: VCEO = −230 V (min)

• Complementary to 2SC5200

• Recommended for 100-W high-fidelity audio frequency amplifier

output stage.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

−230

V

Collector-emitter voltage

VCEO

−230

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−15

A

Base current

IB

−1.5

A

Collector power dissipation

(Tc = 25°C)

PC

150

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −230 V, IE = 0

―

−5.0

µA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−5.0

µA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −50 mA, IB = 0

−230

―

V

hFE (1)

(Note)

VCE = −5 V, IC = −1 A

55

―

160

DC current gain

hFE (2)

VCE = −5 V, IC = −7 A

35

60

―

Collector-emitter saturation voltage

VCE (sat)

IC = −8 A, IB = −0.8 A

―

−1.5

−3.0

V

Base-emitter voltage

VBE

VCE = −5 V, IC = −7 A

―

−1.0

−1.5

V

Transition frequency

fT

VCE = −5 V, IC = −1 A

―

30

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

360

―

pF

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

Similar Part No. - 2SA1943

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SA1943	148Kb / 2P	TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
JILIN SINO-MICROELECTRO...	2SA1943	501Kb / 8P	Power Amplifier Applications
Unisonic Technologies	2SA1943	112Kb / 3P	POWER AMPLIFIER APPLICATIONS
Foshan Blue Rocket Elec...	2SA1943	1Mb / 6P	Silicon PNP transistor in a TO-3P Plastic Package.
Fairchild Semiconductor	2SA1943	215Kb / 6P	PNP Epitaxial Silicon Transistor

More results

Similar Description - 2SA1943

Manufacturer	Part #	Datasheet	Description
Unisonic Technologies	2SC2881	175Kb / 4P	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
Toshiba Semiconductor	2SC2881	146Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
	2SC2882	125Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
	2SA1201	146Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
Unisonic Technologies	2SC2881	115Kb / 3P	VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS
Toshiba Semiconductor	2SA1201	158Kb / 4P	Voltage Amplifier Applications Power Amplifier Applications
	2SA1202	142Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
	2SA1202	130Kb / 4P	Power Amplifier Applications Voltage Amplifier Applications
	2SA1734	167Kb / 5P	Power Amplifier Applications Power Switching Applications
	2SA1761	186Kb / 4P	Power Amplifier Applications Power Switching Applications
	2SA1892	159Kb / 5P	Power Amplifier Applications Power Switching Applications

More results

2SA1943 Datasheet(PDF) 1 Page - Toshiba Semiconductor

2SA1943 Datasheet(HTML) 1 Page - Toshiba Semiconductor

Similar Part No. - 2SA1943

Similar Description - 2SA1943

Html Pages

1 2 3 4 5

Datasheet Download

Link URL